Invention Grant
- Patent Title: Semiconductor device and method of forming the same
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Application No.: US16158317Application Date: 2018-10-12
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Publication No.: US11244948B2Publication Date: 2022-02-08
- Inventor: Feng-Yi Chang , Fu-Che Lee , Yi-Ching Chang , Kai-Lou Huang
- Applicant: UNITED MICROELECTRONICS CORP. , Fujian Jinhua Integrated Circuit Co., Ltd.
- Applicant Address: TW Hsin-Chu; CN Quanzhou
- Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee Address: TW Hsin-Chu; CN Quanzhou
- Agent Winston Hsu
- Priority: CN201811042190.8 20180907
- Main IPC: H01L27/108
- IPC: H01L27/108

Abstract:
A semiconductor device and method of forming the same, the semiconductor device includes a substrate, a first plug, a conductive pad and a capacitor structure. The first plug is disposed on the substrate, and the conductive pad is disposed on the first plug, with the conductive pad including a recessed shoulder portion at a top corner thereof. The capacitor structure is disposed on the conductive pad, to directly in connection with thereto.
Public/Granted literature
- US20200083224A1 SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME Public/Granted day:2020-03-12
Information query
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