Invention Grant
- Patent Title: Perovskite optoelectronic device, preparation method therefor and perovskite material
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Application No.: US16068651Application Date: 2017-01-17
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Publication No.: US11245076B2Publication Date: 2022-02-08
- Inventor: Jianpu Wang , Nana Wang , Rui Ge , Wei Huang
- Applicant: NANJING TECH UNIVERSITY
- Applicant Address: CN Nanjing
- Assignee: NANJING TECH UNIVERSITY
- Current Assignee: NANJING TECH UNIVERSITY
- Current Assignee Address: CN Nanjing
- Agency: CBM Patent Consulting, LLC
- Priority: CN201610051400.4 20160126
- International Application: PCT/CN2017/071351 WO 20170117
- International Announcement: WO2017/128987 WO 20170803
- Main IPC: H01L51/00
- IPC: H01L51/00 ; C09K11/06 ; H01L51/50 ; H01L51/42 ; H01L51/44 ; H01L51/52 ; H01L51/56 ; H01S5/36

Abstract:
It discloses a perovskite optoelectronic device which includes a substrate, electrode layers and functional layers. The electrode layer is deposited on the substrate, the functional layer is deposited between the electrode layers, and the functional layer at least includes a perovskite layer, wherein the perovskite layer is a perovskite material possessing a self-organized multiple quantum well structure. By adjusting material components, controllable adjustment of the structure of the multiple quantum wells and effective energy transfer between the multiple quantum wells can be implemented, and light emitting color may be near-ultraviolet light, visible light and near-infrared light; moreover, the problems of low coverage and poor stability of the existing perovskite films can be effectively solved.
Public/Granted literature
- US20190036030A1 PEROVSKITE OPTOELECTRONIC DEVICE, PREPARATION METHOD THEREFOR AND PEROVSKITE MATERIAL Public/Granted day:2019-01-31
Information query
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