- 专利标题: Semiconductor device
-
申请号: US16984604申请日: 2020-08-04
-
公开(公告)号: US11251089B2公开(公告)日: 2022-02-15
- 发明人: Fei Zhou
- 申请人: Semiconductor Manufacturing International (Shanghai) Corporation , Semiconductor Manufacturing International (Beijing) Corporation
- 申请人地址: CN Shanghai; CN Beijing
- 专利权人: Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- 当前专利权人: Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- 当前专利权人地址: CN Shanghai; CN Beijing
- 代理机构: Anova Law Group, PLLC
- 优先权: CN201611125155.3 20161208
- 主分类号: H01L21/8234
- IPC分类号: H01L21/8234 ; H01L21/28 ; H01L21/3213 ; H01L29/423 ; H01L29/08 ; H01L27/088 ; H01L29/78 ; H01L29/16 ; H01L29/161 ; C23F1/00
摘要:
A semiconductor device is provided. The semiconductor device includes a base substrate, which include a first region having a first transistor and a second region having a second transistor, the first transistor having a working current smaller than the second transistor. The semiconductor device further includes a first gate electrode on the first region of the base substrate, a second gate electrode on the second region of the base substrate and having an undercut structure, a first source/drain doped region in the base substrate on both sides of the first gate electrode, and a second source/drain doped region in the base substrate on both sides of the second gate electrode.