Invention Grant
- Patent Title: Annular member, plasma processing apparatus and plasma etching method
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Application No.: US16545185Application Date: 2019-08-20
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Publication No.: US11257662B2Publication Date: 2022-02-22
- Inventor: Shingo Kitamura , Koichi Kazama , Masahiro Ogasawara , Susumu Nogami , Tetsuji Sato
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: IPUSA, PLLC
- Priority: JPJP2018-155796 20180822
- Main IPC: H01J37/32
- IPC: H01J37/32 ; H01L21/687 ; H01L21/3213
Abstract:
An annular member is disposed to surround a pedestal for receiving a substrate in a plasma processing apparatus. The annular member contains quartz and silicon. A content percentage of the silicon in the quartz and the silicon is 2.5% or more and 10% and less by weight.
Public/Granted literature
- US20200066496A1 ANNULAR MEMBER, PLASMA PROCESSING APPARATUS AND PLASMA ETCHING METHOD Public/Granted day:2020-02-27
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