- Patent Title: Semiconductor device having a high-k dielectric material disposed beyween first and second transmission lines and a dielectric directly contacting the high-k dielectric material
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Application No.: US16734976Application Date: 2020-01-06
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Publication No.: US11258151B2Publication Date: 2022-02-22
- Inventor: Jiun Yi Wu , Chien-Hsun Lee , Chewn-Pu Jou , Fu-Lung Hsueh
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: H01P3/08
- IPC: H01P3/08 ; H01P11/00 ; H01P3/02 ; H01P3/06
Abstract:
A semiconductor device includes a first transmission line and a second transmission line. The semiconductor device further includes a high-k dielectric material between the first transmission line and the second transmission line, wherein the high-k dielectric material surrounds the second transmission line. The semiconductor device further includes a dielectric material directly contacting the high-k dielectric material, wherein the dielectric material has a different dielectric constant from the high-k dielectric material, and the dielectric material is separated from the first transmission line and the second transmission line.
Public/Granted literature
- US20200153073A1 SEMICONDUCTOR DEVICE INCLUDING TRANSMISSION LINES AND METHOD OF FORMING THE SAME Public/Granted day:2020-05-14
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