Invention Grant
- Patent Title: Method of cleaning extreme ultraviolet lithography collector
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Application No.: US16547317Application Date: 2019-08-21
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Publication No.: US11262659B2Publication Date: 2022-03-01
- Inventor: An-Ren Zi , Chin-Hsiang Lin , Ching-Yu Chang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: G03F7/20
- IPC: G03F7/20 ; G03B27/42
Abstract:
A method of cleaning an extreme ultraviolet lithography collector includes applying a cleaning composition to a surface of the extreme ultraviolet lithography collector having debris on the surface of the collector in an extreme ultraviolet radiation source chamber. The cleaning composition includes: a major solvent having Hansen solubility parameters of 25>δd>15, 25>δp>10, and 30>δh>6; and an acid having an acid dissociation constant, pKa, of −15
Public/Granted literature
- US20200073250A1 METHOD OF CLEANING EXTREME ULTRAVIOLET LITHOGRAPHY COLLECTOR Public/Granted day:2020-03-05
Information query
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