- Patent Title: Integrated circuit devices and manufacturing methods for the same
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Application No.: US16919307Application Date: 2020-07-02
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Publication No.: US11264294B2Publication Date: 2022-03-01
- Inventor: Seungheon Lee , Jaekang Koh , Hyukwoo Kwon , Munjun Kim , Taejong Han
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Lee IP Law, P.C.
- Priority: KR10-2019-0135593 20191029
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L23/29 ; H01L23/31

Abstract:
A method of manufacturing an integrated circuit device, the method including forming a plurality of target patterns on a substrate such that an opening is defined between two adjacent target patterns; forming a pyrolysis material layer on the substrate such that the pyrolysis material layer partially fills the opening and exposes an upper surface and a portion of a sidewall of the two adjacent target patterns; and forming a material layer on the exposed upper surface and the exposed portion of the sidewall of the two adjacent target patterns, wherein, during the forming of the material layer, the material layer does not remain on a resulting surface of the pyrolysis material layer.
Public/Granted literature
- US20210125884A1 INTEGRATED CIRCUIT DEVICES AND MANUFACTURING METHODS FOR THE SAME Public/Granted day:2021-04-29
Information query
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