Invention Grant
- Patent Title: Semiconductor device including dummy gate patterns and manufacturing method thereof
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Application No.: US16572681Application Date: 2019-09-17
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Publication No.: US11264482B2Publication Date: 2022-03-01
- Inventor: Donghyun Kim , Inhyun Song , Yeongmin Jeon , Sejin Park , Juyun Park , Jonghoon Baek , Taeyeon Shin , Sooyeon Jeong
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2019-0047578 20190423
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/8234 ; H01L29/78 ; H01L27/088
Abstract:
A semiconductor device may include: a dummy gate structure including a first gate pattern in which dummy gate lines extending in one direction are connected to each other on a substrate, and a second gate pattern in which dummy gate lines extending in the one direction are connected to each other on the same line with the first gate pattern; and a third gate pattern extending in parallel with the dummy gate structure on one side of the dummy gate structure.
Public/Granted literature
- US20200343364A1 SEMICONDUCTOR DEVICE INCLUDING GATE PATTERN AND MANUFACTURING METHOD THEREOF Public/Granted day:2020-10-29
Information query
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