Invention Grant
- Patent Title: Light emitting diode with high luminous efficiency
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Application No.: US15145528Application Date: 2016-05-03
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Publication No.: US11264540B2Publication Date: 2022-03-01
- Inventor: Joon Hee Lee , Mi Hee Lee
- Applicant: Seoul Viosys Co., Ltd.
- Applicant Address: KR Ansan-si
- Assignee: Seoul Viosys Co., Ltd.
- Current Assignee: Seoul Viosys Co., Ltd.
- Current Assignee Address: KR Ansan-si
- Agency: H.C. Park & Associates, PLC
- Priority: KR10-2014-0129009 20140926,KR10-2015-0054554 20150417
- Main IPC: H01L33/38
- IPC: H01L33/38 ; H01L33/40

Abstract:
A light emitting diode includes a light emitting structure including first and second conductive type semiconductor layers and an active layer disposed therebetween, a second hole formed through the active layer and the second conductive type semiconductor layer, and exposing the first conductive type semiconductor layer, a reflective metal layer contacting a portion of the light emitting structure, a cover metal layer contacting at least a portion of the reflective metal layer, a first insulation layer covering the reflective metal layer and the cover metal layer, an electrode layer disposed on the first insulation layer, the electrode layer covering the first insulation layer and filling the second hole, an electrode pad disposed on the light emitting structure, and a first hole formed through the first conductive type semiconductor layer and corresponding to the cover metal layer, in which the electrode pad overlaps the cover metal layer.
Public/Granted literature
- US20160247971A1 LIGHT EMITTING DIODE Public/Granted day:2016-08-25
Information query
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