Invention Grant
- Patent Title: Method for manufacturing transition metal chalcogenide and transition metal chalcogenide prepared thereby
-
Application No.: US16925674Application Date: 2020-07-10
-
Publication No.: US11268210B2Publication Date: 2022-03-08
- Inventor: Sung-Yool Choi , Woonggi Hong , Gi Woong Shim
- Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
- Applicant Address: KR Daejeon
- Assignee: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
- Current Assignee: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
- Current Assignee Address: KR Daejeon
- Main IPC: C30B25/02
- IPC: C30B25/02 ; C30B31/18 ; C23C16/30 ; C30B29/46
Abstract:
The present disclosure provides a method for preparing a transition metal chalcogenide including: a step of forming a transition metal chalcogenide thin film; and a step of controlling the defects of the transition metal chalcogenide thin film by injecting a processing gas including oxygen and nitrogen to the formed transition metal chalcogenide thin film.
Public/Granted literature
Information query
IPC分类:
