Invention Grant
- Patent Title: Method and apparatus for maximized dedupable memory
-
Application No.: US16595441Application Date: 2019-10-07
-
Publication No.: US11269811B2Publication Date: 2022-03-08
- Inventor: Dongyan Jiang , Qiang Peng , Hongzhong Zheng
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Renaissance IP Law Group LLP
- Main IPC: G06F3/06
- IPC: G06F3/06 ; G06F16/174 ; G06F11/14 ; G06F16/22 ; G06F16/215
Abstract:
A memory system is disclosed. The memory system may include a Big Hash Table and a Little Hash Table. The memory system may also include an Overflow Region and a Translation Table to map a logical address to a Physical Line Identifier (PLID), which may include a region identifier and a physical address.
Public/Granted literature
- US20200042501A1 METHOD AND APPARATUS FOR MAXIMIZED DEDUPABLE MEMORY Public/Granted day:2020-02-06
Information query
