- 专利标题: Capacitorless DRAM cell
-
申请号: US17224258申请日: 2021-04-07
-
公开(公告)号: US11270999B2公开(公告)日: 2022-03-08
- 发明人: Cezar Bogdan Zota , Clarissa Convertino , Lukas Czornomaz , Siegfried Friedrich Karg
- 申请人: International Business Machines Corporation
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理商 William H. Hartwell; Stephen R. Yoder
- 主分类号: H01L27/108
- IPC分类号: H01L27/108 ; G11C11/404 ; G11C11/401
摘要:
The invention relates to a capacitorless DRAM cell, the cell comprising a heterostructure, a gate structure adjoining the heterostructure in a first direction, a drain structure adjoining the heterostructure in a second direction perpendicular to the first direction, and a source structure adjoining the heterostructure in the direction opposite the second direction, the heterostructure comprising one or more semiconducting channel layers and one or more electrically insulating barrier layers, the channel layers and the barrier layers being alternatingly stacked in the first direction.
公开/授权文献
- US20210225845A1 CAPACITORLESS DRAM CELL 公开/授权日:2021-07-22