Invention Grant
- Patent Title: Method of breaking through etch stop layer
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Application No.: US16907634Application Date: 2020-06-22
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Publication No.: US11276571B2Publication Date: 2022-03-15
- Inventor: Yu Shih Wang , Hong-Jie Yang , Chia-Ying Lee , Po-Nan Yeh , U-Ting Chiu , Chun-Neng Lin , Ming-Hsi Yeh , Kuo-Bin Huang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/027
- IPC: H01L21/027 ; H01L21/8234 ; H01L29/78 ; H01L29/66 ; H01L21/308

Abstract:
A photo resist layer is used to protect a dielectric layer and conductive elements embedded in the dielectric layer when patterning an etch stop layer underlying the dielectric layer. The photo resist layer may further be used to etch another dielectric layer underlying the etch stop layer, where etching the next dielectric layer exposes a contact, such as a gate contact. The bottom layer can be used to protect the conductive elements embedded in the dielectric layer from a wet etchant used to etch the etch stop layer.
Public/Granted literature
- US20210202238A1 METHOD OF BREAKING THROUGH ETCH STOP LAYER Public/Granted day:2021-07-01
Information query
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