Invention Grant
- Patent Title: Spin orbit torque memory devices and methods of fabrication
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Application No.: US16246360Application Date: 2019-01-11
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Publication No.: US11276730B2Publication Date: 2022-03-15
- Inventor: Kevin O'Brien , Christopher Wiegand , Tofizur Rahman , Noriyuki Sato , Gary Allen , James Pellegren , Angeline Smith , Tanay Gosavi , Sasikanth Manipatruni , Kaan Oguz , Benjamin Buford , Ian Young
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Essential Patents Group, LLP
- Main IPC: H01L27/22
- IPC: H01L27/22 ; H01L43/04 ; H01L43/14 ; H01L43/08 ; H01L43/10
Abstract:
A perpendicular spin orbit memory device includes a first electrode having a magnetic material and platinum and a material layer stack on a portion of the first electrode. The material layer stack includes a free magnet, a fixed magnet above the first electrode, a tunnel barrier between the free magnet and the fixed magnet and a second electrode coupled with the fixed magnet.
Public/Granted literature
- US20200227474A1 SPIN ORBIT TORQUE MEMORY DEVICES AND METHODS OF FABRICATION Public/Granted day:2020-07-16
Information query
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