- 专利标题： Resistive random access memory devices and methods for forming the same
-
申请号： US16683467申请日： 2019-11-14
-
公开(公告)号： US11289541B2公开(公告)日： 2022-03-29
- 发明人: Frederick Chen
- 申请人： Winbond Electronics Corp.
- 申请人地址： TW Taichung
- 专利权人： Winbond Electronics Corp.
- 当前专利权人： Winbond Electronics Corp.
- 当前专利权人地址： TW Taichung
- 代理机构： Muncy, Geissler, Olds & Lowe, PC
- 主分类号： H01L27/24
- IPC分类号： H01L27/24 ; H01L45/00 ; H01L29/08 ; H01L29/10 ; H01L29/417 ; H01L29/78 ; H01L21/265 ; H01L21/306 ; H01L21/74 ; H01L29/66
摘要：
A resistive random access memory (RRAM) device is provided. The RRAM device includes a gate structure on a substrate, and a source region and a drain region disposed on opposite sides of the gate structure on the substrate. The source region includes a semiconductor bulk, and the drain region includes a plurality of semiconductor fins adjacent to the semiconductor bulk, wherein the semiconductor fins are separated from each other by an isolation layer. The RRAM device further includes a plurality of RRAM units, wherein each of the RRAM units electrically contacts one of the semiconductor fins.
公开/授权文献
信息查询
IPC分类:
