Invention Grant
- Patent Title: Reduction of electric field enhanced moisture penetration by metal shielding
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Application No.: US16410259Application Date: 2019-05-13
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Publication No.: US11289568B2Publication Date: 2022-03-29
- Inventor: Chi-Yuan Shih , Kai-Fung Chang , Shih-Fen Huang , Wen-Chuan Tai , Yi-Chuan Teng , Yi Heng Tsai , You-Ru Lin , Yen-Wen Chen , Anderson Lin , Fu-Chun Huang , Chun-Ren Cheng , Ivan Hua-Shu Wu , Fan Hu , Ching-Hui Lin , Yan-Jie Liao
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01L23/58 ; H01L23/00

Abstract:
The present disclosure relates to a MIM (metal-insulator-metal) capacitor having a top electrode overlying a substrate. A passivation layer overlies the top electrode. The passivation layer has a step region that continuously contacts and extends from a top surface of the top electrode to sidewalls of the top electrode. A metal frame overlies the passivation layer. The metal frame continuously contacts and extends from a top surface of the passivation layer to upper sidewalls of the passivation layer in the step region. The metal frame has a protrusion that extends through the passivation layer and contacts the top surface of the top electrode.
Public/Granted literature
- US20200006469A1 REDUCTION OF ELECTRIC FIELD ENHANCED MOISTURE PENETRATION BY METAL SHIELDING Public/Granted day:2020-01-02
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