Invention Grant
- Patent Title: Dielectric-filled trench isolation of vias
-
Application No.: US16769548Application Date: 2018-03-30
-
Publication No.: US11296031B2Publication Date: 2022-04-05
- Inventor: Kemal Aygun , Zhiguo Qian , Jianyong Xie
- Applicant: INTEL CORPORATION
- Applicant Address: US CA Santa Clara
- Assignee: INTEL CORPORATION
- Current Assignee: INTEL CORPORATION
- Current Assignee Address: US CA Santa Clara
- Agency: Essential Patents Group, LLP.
- International Application: PCT/US2018/025519 WO 20180330
- International Announcement: WO2019/190562 WO 20191003
- Main IPC: H01L23/538
- IPC: H01L23/538 ; H01L21/762 ; H01L29/06 ; H01L21/765 ; H01L25/065

Abstract:
An apparatus is provided which comprises: a substrate, the substrate comprising crystalline material, a first set of one or more contacts on a first substrate surface, a second set of one or more contacts on a second substrate surface, the second substrate surface opposite the first substrate surface, a first via through the substrate coupled with a first one of the first set of contacts and with a first one of the second set of contacts; a second via through the substrate coupled with a second one of the first set of contacts and with a second one of the second set of contacts, a trench in the substrate from the first substrate surface toward the second substrate surface, wherein the trench is apart from, and between, the first via and the second via, and dielectric material filling the trench. Other embodiments are also disclosed and claimed.
Information query
IPC分类: