- 专利标题： Method for the integration of monolithic thin film radiation detector systems
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申请号： US16605534申请日： 2018-04-13
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公开(公告)号： US11296140B2公开(公告)日： 2022-04-05
- 发明人: Jesus I. Mejia-Silva , Manuel Quevedo-Lopez , Bruce E. Gnade , Carlos Hugo Avila Avendano , Bhabendra K. Pradhan
- 申请人： Board of Regents, The University of Texas System , Nanoholdings LLC
- 申请人地址： US TX Austin; US CT Rowayton
- 专利权人： Board of Regents, The University of Texas System,Nanoholdings LLC
- 当前专利权人： Board of Regents, The University of Texas System,Nanoholdings LLC
- 当前专利权人地址： US TX Austin; US CT Rowayton
- 代理机构： Saliwanchik, Lloyd & Eisenschenk
- 国际申请： PCT/US2018/027598 WO 20180413
- 国际公布： WO2018/194934 WO 20181025
- 主分类号： G01T1/20
- IPC分类号： G01T1/20 ; H01L27/146 ; H01L29/786 ; H01L31/0392
摘要：
A thin film radiation detection device includes a photosensitive p-n diode, a polysilicon thin film transistor (TFT), a radiation detection layer, and a substrate. The photosensitive p-n diode and the TFT are formed on the substrate. The radiation detection layer is formed above the substrate and receives multiple radiations. The photosensitive p-n diode receives a conversion output signal from the radiation detection layer and generates a detector signal. The TFT generates an amplified signal based on the detector signal.
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