发明授权
- 专利标题： Field effect transistors with back gate contact and buried high resistivity layer
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申请号： US16743589申请日： 2020-01-15
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公开(公告)号： US11296190B2公开(公告)日： 2022-04-05
- 发明人: Vibhor Jain , Anthony K. Stamper , Steven M. Shank , John J. Ellis-Monaghan , John J. Pekarik
- 申请人： GLOBALFOUNDRIES U.S. INC.
- 申请人地址： US CA Santa Clara
- 专利权人： GLOBALFOUNDRIES U.S. INC.
- 当前专利权人： GLOBALFOUNDRIES U.S. INC.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Roberts Calderon Safran & Cole, P.C.
- 代理商 Francois Pagette; Andrew M. Calderon
- 主分类号： H01L29/10
- IPC分类号： H01L29/10 ; H01L27/12 ; H01L21/84 ; H01L29/78 ; H01L21/74
摘要：
The present disclosure relates to semiconductor structures and, more particularly, to field effect transistors with back gate contact and buried high resistivity layer and methods of manufacture. The structure includes: a handle wafer comprising a single crystalline semiconductor region; an insulator layer over the single crystalline semiconductor region; a semiconductor layer over the insulator layer; a high resistivity layer in the handle wafer, separated from the insulator layer by the single crystalline semiconductor region; and a device on the semiconductor layer.
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