Invention Grant
- Patent Title: Semiconductor device structure and methods of forming the same
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Application No.: US16944018Application Date: 2020-07-30
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Publication No.: US11309212B2Publication Date: 2022-04-19
- Inventor: Lin-Yu Huang , Li-Zhen Yu , Chia-Hao Chang , Cheng-Chi Chuang , Kuan-Lun Cheng , Chih-Hao Wang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: NZ Carr Law Office PLLC
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/528 ; H01L23/532

Abstract:
A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a device, a first conductive structure disposed over the device, and the first conductive structure includes a first sidewall having a first portion and a second portion. The semiconductor device structure further includes a first spacer layer disposed on the first portion, a second conductive structure disposed adjacent the first conductive structure, and the second conductive structure includes a second sidewall having a third portion and a fourth portion. The semiconductor device structure further includes a second spacer layer disposed on the third portion, and an air gap is formed between the first conductive structure and the second conductive structure. The second portion, the first spacer layer, the fourth portion, and the second spacer layer are exposed to the air gap.
Public/Granted literature
- US20220037191A1 SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME Public/Granted day:2022-02-03
Information query
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