Invention Grant
- Patent Title: Integrated circuit photodetector
-
Application No.: US16788145Application Date: 2020-02-11
-
Publication No.: US11309347B2Publication Date: 2022-04-19
- Inventor: Chun-Wei Hsu , Tsai-Hao Hung , Chung-Yu Lin , Ying-Hsun Chen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Seed IP Law Group LLP
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L31/18 ; H01L31/028 ; H01L31/0236 ; H01L31/0232 ; H01L31/0304 ; H01L31/032 ; H01L31/0296

Abstract:
An integrated circuit includes a photodetector. The photodetector includes one or more dielectric structures positioned in a trench in a semiconductor substrate. The photodetector includes a photosensitive material positioned in the trench and covering the one or more dielectric structures. A dielectric layer covers the photosensitive material. The photosensitive material has an index of refraction that is greater than the indices of refraction of the dielectric structures and the dielectric layer.
Public/Granted literature
- US20210249464A1 INTEGRATED CIRCUIT PHOTODETECTOR Public/Granted day:2021-08-12
Information query
IPC分类: