- 专利标题： Non-volatile memory structure and manufacturing method thereof
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申请号： US16822030申请日： 2020-03-18
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公开(公告)号： US11309433B2公开(公告)日： 2022-04-19
- 发明人: Yi-Hui Chen , Chih-Hao Lin
- 申请人： Winbond Electronics Corp.
- 申请人地址： TW Taichung
- 专利权人： Winbond Electronics Corp.
- 当前专利权人： Winbond Electronics Corp.
- 当前专利权人地址： TW Taichung
- 代理机构： JCIPRNET
- 主分类号： H01L29/788
- IPC分类号： H01L29/788 ; H01L29/66 ; H01L29/49 ; H01L21/764 ; H01L29/51
摘要：
A non-volatile memory structure including a substrate, a plurality of charge storage layers, a first dielectric layer, and a control gate is provided. The charge storage layers are located on the substrate. An opening is provided between two adjacent charge storage layers. The first dielectric layer is located on the charge storage layers and on a surface of the opening. A bottom cross-sectional profile of the first dielectric layer located in the opening is a profile that is recessed on both sides. The control gate is located on the first dielectric layer and fills the opening.
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