- 专利标题: Nitride semiconductor light-emitting element, method for manufacturing nitride semiconductor light-emitting element, and nitride semiconductor light-emitting device
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申请号: US16584173申请日: 2019-09-26
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公开(公告)号: US11309688B2公开(公告)日: 2022-04-19
- 发明人: Daisuke Ikeda , Gen Shimizu , Hideo Kitagawa , Toru Takayama , Masayuki Ono , Katsuya Samonji , Osamu Tomita , Satoko Kawasaki
- 申请人: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- 申请人地址: JP Osaka
- 专利权人: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- 当前专利权人: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- 当前专利权人地址: JP Osaka
- 代理机构: McDermott Will & Emery LLP
- 优先权: JPJP2017-065568 20170329,JPJP2017-190801 20170929
- 主分类号: H01S5/343
- IPC分类号: H01S5/343 ; H01S5/026 ; H01S5/02 ; H01S5/22 ; H01L21/20 ; H01L21/3065 ; B28D5/00 ; H01L33/00 ; H01L21/285
摘要:
In a method for manufacturing a nitride semiconductor light-emitting element by splitting a semiconductor layer stacked substrate including a semiconductor layer stacked body with a plurality of waveguides extending along the Y-axis to fabricate a bar-shaped substrate, and splitting the bar-shaped substrate along a lengthwise split line to fabricate an individual element, the waveguide in the individual element has different widths at one end portion and the other end portion and the center line of the waveguide is located off the center of the individual element along the X-axis, and in the semiconductor layer stacked substrate including a first element forming region and a second element forming region which are adjacent to each other along the X-axis, two lengthwise split lines sandwiching the first element forming region and two lengthwise split lines sandwiching the second element forming region are misaligned along the X-axis.
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