Invention Grant
- Patent Title: Memory device having vertical structure
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Application No.: US17087096Application Date: 2020-11-02
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Publication No.: US11315639B2Publication Date: 2022-04-26
- Inventor: Sung Lae Oh , Sang Woo Park , Dong Hyuk Chae , Ki Soo Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si
- Priority: KR10-2020-0068847 20200608
- Main IPC: G11C16/24
- IPC: G11C16/24 ; G11C16/08 ; H01L27/11539 ; H01L27/11556 ; H01L27/11573 ; H01L27/11582

Abstract:
A memory device includes a cell wafer including a memory cell array; a first logic wafer bonded to one surface of the cell wafer, and including a first logic circuit which controls the memory cell array; and a second logic wafer bonded to the other surface of the cell wafer which faces away from the one surface, and including a second logic circuit which controls the memory cell array.
Public/Granted literature
- US20210383874A1 MEMORY DEVICE HAVING VERTICAL STRUCTURE Public/Granted day:2021-12-09
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