Invention Grant
- Patent Title: Amorphous layers for reducing copper diffusion and method forming same
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Application No.: US16890413Application Date: 2020-06-02
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Publication No.: US11315829B2Publication Date: 2022-04-26
- Inventor: Jyh-Nan Lin , Chia-Yu Wu , Kai-Shiung Hsu , Ding-I Liu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/02 ; H01L23/532 ; H01L23/522 ; C23F1/12
Abstract:
A method includes depositing an etch stop layer over a first conductive feature, performing a first treatment to amorphize the etch stop layer, depositing a dielectric layer over the etch stop layer, etching the dielectric layer to form an opening, etching-through the etch stop layer to extend the opening into the etch stop layer, and filling the opening with a conductive material to form a second conductive feature.
Public/Granted literature
- US20210066122A1 Amorphous Layers for Reducing Copper Diffusion and Method Forming Same Public/Granted day:2021-03-04
Information query
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