Invention Grant
- Patent Title: Thin film transistor structure and manufacturing method thereof, circuit structure, display substrate and display device
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Application No.: US16097875Application Date: 2018-03-14
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Publication No.: US11315960B2Publication Date: 2022-04-26
- Inventor: Can Yuan , Zhenfei Cai , Yongqian Li , Pan Xu , Zhidong Yuan , Meng Li , Xuehuan Feng
- Applicant: BOE TECHNOLOGY GROUP CO., LTD. , HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Applicant Address: CN Beijing; CN Anhui
- Assignee: BOE TECHNOLOGY GROUP CO., LTD.,HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee: BOE TECHNOLOGY GROUP CO., LTD.,HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Beijing; CN Anhui
- Agency: Brooks Kushman P.C.
- Priority: CN201720520432.4 20170511
- International Application: PCT/CN2018/078963 WO 20180314
- International Announcement: WO2018/205740 WO 20181115
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L29/786 ; H01L27/32
Abstract:
A thin film transistor structure and a manufacturing method thereof, a circuit structure, a display substrate and a display device are provided. The thin film transistor structure includes: a base plate, and a first thin film transistor and a second thin film transistor stacked on the base plate. The first thin film transistor and the second thin film transistor share a same active layer.
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