Invention Grant
- Patent Title: Method of classifying defects in a specimen semiconductor examination and system thereof
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Application No.: US16228676Application Date: 2018-12-20
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Publication No.: US11321633B2Publication Date: 2022-05-03
- Inventor: Assaf Asbag , Boaz Cohen , Shiran Gan-Or
- Applicant: Applied Materials Israel Ltd.
- Applicant Address: IL Rehovot
- Assignee: Applied Materials Israel Ltd.
- Current Assignee: Applied Materials Israel Ltd.
- Current Assignee Address: IL Rehovot
- Agency: Lowenstein Sandler LLP
- Main IPC: G06N20/20
- IPC: G06N20/20 ; G06N20/00 ; G06F16/28

Abstract:
There are provided a classifier and method of classifying defects in a semiconductor specimen. The method comprises receiving defects classified into a majority class, each having values for plurality of attributes, some defects belonging to a minority class, and some to the majority; selecting an attribute subset and defining differentiators for attributes wherein a second classifier using the subset and differentiators classifies correctly to minority and majority classes at least part of the defects; generating a training set comprising: defects of the majority and minority classes, and additional defects which the second classifier classifies as minority; training, upon the training set, subset, and differentiators, an engine obtaining a confidence level that a defect belongs to the majority class; applying the engine to second defects classified to the majority class, to obtain a confidence level of classifying each defect to the majority class; and outputting defects having a low confidence level.
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