- 专利标题: Nitride light emitter
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申请号: US16670833申请日: 2019-10-31
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公开(公告)号: US11322908B2公开(公告)日: 2022-05-03
- 发明人: Toru Takayama , Tohru Nishikawa , Tougo Nakatani , Katsuya Samonji , Takashi Kano , Shinji Ueda
- 申请人: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- 申请人地址: JP Osaka
- 专利权人: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- 当前专利权人: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- 当前专利权人地址: JP Osaka
- 代理机构: McDermott Will & Emery LLP
- 优先权: JPJP2017-091238 20170501
- 主分类号: H01S5/34
- IPC分类号: H01S5/34 ; H01S5/024 ; H01S5/026 ; H01S5/22 ; H01S5/343 ; H01S5/023 ; H01S5/0233 ; H01S5/0235 ; H01S5/16 ; H01S5/02 ; H01S5/0234 ; F21Y115/30 ; F21S41/176 ; F21S41/16 ; H01S5/20 ; H01S5/10 ; H01S5/0237
摘要:
A nitride light emitter includes: a nitride semiconductor light-emitting element including an AlxGa1-xN substrate (0≤x≤1) and a multilayer structure above the AlxGa1-xN substrate; and a submount substrate on which the nitride semiconductor light-emitting element is mounted. The multilayer structure includes a first clad layer of a first conductivity type, a first light guide layer, a quantum-well active layer, a second light guide layer, and a second clad layer of a second conductivity type which are stacked sequentially from the AlxGa1-xN substrate. The multilayer structure and submount substrate are opposed to each other. The submount substrate comprises diamond. The nitride semiconductor light-emitting element has a concave warp on a surface closer to the AlxGa1-xN substrate.
公开/授权文献
- US20200067267A1 NITRIDE LIGHT EMITTER 公开/授权日:2020-02-27