Invention Grant
- Patent Title: Semiconductor device and method of producing the same
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Application No.: US16973765Application Date: 2019-06-19
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Publication No.: US11329005B2Publication Date: 2022-05-10
- Inventor: Sergey Bolotov , Yusuke Kubo
- Applicant: Dexerials Corporation
- Applicant Address: JP Tokyo
- Assignee: Dexerials Corporation
- Current Assignee: Dexerials Corporation
- Current Assignee Address: JP Tokyo
- Agency: Kenja IP Law PC
- Priority: JPJP2018-118080 20180621
- International Application: PCT/JP2019/024363 WO 20190619
- International Announcement: WO2019/244950 WO 20191226
- Main IPC: H01L23/552
- IPC: H01L23/552 ; H01L23/367 ; H01L23/373 ; H01L21/48

Abstract:
Provided is a semiconductor device having excellent heat dissipation capacity and electromagnetic wave suppression effect. A semiconductor device 1 includes a semiconductor device 30; a tubular conductive shield can 20 provided to surround a side surface 30a of the semiconductor device 30; a conductive cooling member 40; and a conductive thermally conductive sheet 10 formed between the semiconductor device 30 and the cooling member 40. The conductive shield can 20 and the cooling member 40 are electrically connected through the conductive thermally conductive sheet 10 therebetween.
Public/Granted literature
- US20210225777A1 SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THE SAME Public/Granted day:2021-07-22
Information query
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