Invention Grant
- Patent Title: Thin film transistor, display apparatus including the same, and manufacturing methods thereof
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Application No.: US16877735Application Date: 2020-05-19
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Publication No.: US11329117B2Publication Date: 2022-05-10
- Inventor: Dongsung Lee , Jihwan Kim , Jongoh Seo , Byungsoo So , Dongmin Lee , Yeonhee Jeon , Jonghoon Choi , Byungkyu Son , Seunghyun Jang
- Applicant: SAMSUNG DISPLAY CO., LTD.
- Applicant Address: KR Yongin-si
- Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee Address: KR Yongin-si
- Agency: Cantor Colburn LLP
- Priority: KR10-2019-0084545 20190712
- Main IPC: H01L27/32
- IPC: H01L27/32 ; H01L51/56 ; H01L27/12 ; H01L29/786 ; H01L21/02 ; H01L29/66
Abstract:
A method of manufacturing a thin film transistor includes: removing an oxide film on a surface of an amorphous silicon layer by performing a surface cleaning; and forming an active layer by performing a heat treatment on the amorphous silicon layer, where the amorphous silicon layer is changed into crystalline silicon by the heat treatment.
Public/Granted literature
- US20210013281A1 THIN FILM TRANSISTOR, DISPLAY APPARATUS INCLUDING THE SAME, AND MANUFACTURING METHODS THEREOF Public/Granted day:2021-01-14
Information query
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