An IGBT chip having a mixed gate structure includes a plurality of mixed gate units. Each of the mixed gate units includes a source region (3) and a gate region. The gate region includes a planar gate region (1) and a trench gate region (2), which are respectively disposed at both sides of the source region (3). A planar gate and a trench gate are compositely disposed on the same cell (16), thereby greatly improving chip density while retaining both trench gate's features of low on-state energy loss and high current density and planar gate's feature of wide safe operating area.