Invention Grant
- Patent Title: FinFET gate structure
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Application No.: US15435168Application Date: 2017-02-16
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Publication No.: US11329160B2Publication Date: 2022-05-10
- Inventor: Cheng-Ta Wu , Shiu-Ko Jangjian , Chung-Ren Sun , Ming-Te Chen , Ting-Chun Wang , Jun-Jie Cheng
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/762 ; H01L29/66
Abstract:
A semiconductor device includes a semiconductor fin, a lining oxide layer, a silicon nitride based layer and a gate oxide layer. The semiconductor fin has a top fin surface, an upper fin side surface portion adjacent to the top fin surface, and a lower fin side surface contiguously connected to the upper fin side surface portion. The lining oxide layer peripherally encloses the lower fin side surface portion of the semiconductor fin. The silicon nitride based layer is disposed conformally over the lining oxide layer. The gate oxide layer is disposed conformally over the top fin surface and the upper fin side surface portion.
Public/Granted literature
- US20170162395A1 FINFET GATE STRUCTURE Public/Granted day:2017-06-08
Information query
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