Invention Grant
- Patent Title: Methods for conformal doping of three dimensional structures
-
Application No.: US17045323Application Date: 2019-04-05
-
Publication No.: US11335555B2Publication Date: 2022-05-17
- Inventor: Rui Cheng , Yi Yang , Karthik Janakiraman
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- International Application: PCT/US2019/026196 WO 20190405
- International Announcement: WO2019/195809 WO 20191010
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/02 ; H01L21/285 ; H01L21/324 ; H01L21/225
Abstract:
Methods of conformally doping three dimensional structures are discussed. Some embodiments utilize conformal silicon films deposited on the structures. The silicon films are doped after deposition to comprise halogen atoms. The structures are then annealed to dope the structures with halogen atoms from the doped silicon films.
Public/Granted literature
- US20210175070A1 Methods for Conformal Doping of Three Dimensional Structures Public/Granted day:2021-06-10
Information query
IPC分类:
