Invention Grant
- Patent Title: Thin film transistor, display panel and preparation method thereof, and display apparatus
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Application No.: US16936447Application Date: 2020-07-23
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Publication No.: US11335710B2Publication Date: 2022-05-17
- Inventor: Qinghe Wang , Tongshang Su , Yongchao Huang , Yingbin Hu , Yang Zhang , Haitao Wang , Ning Liu , Guangyao Li , Zheng Wang , Yu Ji , Jinliang Hu , Wei Song , Jun Cheng , Liangchen Yan
- Applicant: Hefei Xinsheng Optoelectronics Technology Co., Ltd. , BOE Technology Group Co., Ltd.
- Applicant Address: CN Anhui; CN Beijing
- Assignee: Hefei Xinsheng Optoelectronics Technology Co., Ltd.,BOE Technology Group Co., Ltd.
- Current Assignee: Hefei Xinsheng Optoelectronics Technology Co., Ltd.,BOE Technology Group Co., Ltd.
- Current Assignee Address: CN Anhui; CN Beijing
- Agency: Ling and Yang Intellectual Property
- Agent Ling Wu; Stephen Yang
- Priority: CN202010070957.9 20200121
- Main IPC: H01L27/00
- IPC: H01L27/00 ; H01L29/00 ; H01L27/12 ; H01L29/24 ; H01L29/66 ; H01L29/786

Abstract:
A thin film transistor, a display panel and a preparation method thereof and a display apparatus are provided. The thin film transistor includes: a substrate; a gate metal located on a side of the substrate; a gate insulating layer located on a side of the gate metal away from the substrate; an active layer located on a side of the gate insulating layer away from the substrate; a first metal oxide and a second metal oxide which are located on a side of the active layer away from the substrate and are arranged on a same layer; and a source metal and a drain metal which are located on sides of the first metal oxide and the second metal oxide away from the substrate and are arranged in a same layer.
Public/Granted literature
- US20210225886A1 Thin Film Transistor, Display Panel and Preparation Method Thereof, and Display Apparatus Public/Granted day:2021-07-22
Information query
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