Invention Grant
- Patent Title: Layer interleaving in multi-layered memory
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Application No.: US16531305Application Date: 2019-08-05
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Publication No.: US11341046B2Publication Date: 2022-05-24
- Inventor: Mikai Chen , Zhengang Chen , Charles See Yeung Kwong
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee Address: US ID Boise
- Agency: Lowenstein Sandler LLP
- Main IPC: G06F12/06
- IPC: G06F12/06 ; G06F12/02

Abstract:
Data can be received to be stored at a memory component. A first location of a first layer of the memory component to store a first portion of the data can be determined. A second location of a second layer of the memory component to store a second portion of the data can be determined, where the second layer is different from the first layer. The first portion of the data can be stored at the first layer of the memory component and the second portion of the data can be stored at the second layer of the memory component.
Public/Granted literature
- US20210042224A1 LAYER INTERLEAVING IN MULTI-LAYERED MEMORY Public/Granted day:2021-02-11
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