Invention Grant
- Patent Title: Method for forming a semiconductor device structure having an electrical connection structure
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Application No.: US16440210Application Date: 2019-06-13
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Publication No.: US11342229B2Publication Date: 2022-05-24
- Inventor: Shih-Chuan Chiu , Jia-Chuan You , Chia-Hao Chang , Chun-Yuan Chen , Tien-Lu Lin , Yu-Ming Lin , Chih-Hao Wang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L27/088 ; H01L29/66 ; H01L29/78 ; H01L21/768 ; H01L23/522 ; H01L29/06
Abstract:
A method for forming an electrical connection structure is provided. The method includes forming a first metal material in an opening of a dielectric layer. The first metal material includes a plurality of grains. The method also includes forming a second metal material over the first metal material. The method also includes annealing the second metal material so that the second metal material diffuses along grain boundaries of the grains of the first metal material. The method also includes removing the second metal material from the upper surface of the first metal material.
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