Invention Grant
- Patent Title: Multi-terminal integrated passive devices embedded on die and a method for fabricating the multi-terminal integrated passive devices
-
Application No.: US16934559Application Date: 2020-07-21
-
Publication No.: US11342246B2Publication Date: 2022-05-24
- Inventor: Aniket Patil , Jonghae Kim , Hong Bok We
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Seyfarth Shaw LLP
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/00 ; H01L21/56 ; H01L23/31

Abstract:
An integrated circuit (IC) package is described. The IC package includes a die. The die including an active layer on a substrate and through substrate vias (TSVs) coupled to the active layer and extending through the substrate to a backside surface of the die. The IC package also includes integrated passive devices (IPDs) on the backside surface of the die and coupled to the active layer through the TSVs. The IC package further includes back-end-of-line (BEOL) layers on the active layer. The IC package also includes a metallization structure on the BEOL layers. The IC package also includes an under bump metallization layer on the metallization structure. The IC package further includes package bumps on the first under bump metallization layer.
Public/Granted literature
Information query
IPC分类: