Invention Grant
- Patent Title: Semiconductor chip state detector
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Application No.: US17002829Application Date: 2020-08-26
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Publication No.: US11342285B2Publication Date: 2022-05-24
- Inventor: Thomas Kuenemund
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Viering, Jentschura & Partner mbB
- Priority: DE102019123539.1 20190903
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/528 ; H01L27/092 ; H01L27/02

Abstract:
A semiconductor chip may have at least one p-channel field effect transistor (FET), at least one n-channel FET, a first and a second power supply terminal, wherein the at least one n-channel FET, if supplied with the upper supply potential at its gate, supplies the lower supply potential to the gate of the at least one p-channel FET and the at least one p-channel FET, if supplied with the lower supply potential at its gate, supplies the upper supply potential to the gate of the at least one n-channel FET, a precharge circuit to precharge the circuit to a first state, and a detection circuit configured to output an alarm signal if the circuit enters a second state.
Public/Granted literature
- US20210066215A1 SEMICONDUCTOR CHIP Public/Granted day:2021-03-04
Information query
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