Invention Grant
- Patent Title: Mechanisms for forming image-sensor device with deep-trench isolation structure
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Application No.: US16889161Application Date: 2020-06-01
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Publication No.: US11342374B2Publication Date: 2022-05-24
- Inventor: Jeng-Shyan Lin , Dun-Nian Yaung , Jen-Cheng Liu , Feng-Chi Hung
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L31/18
Abstract:
An image-sensor device is provided. The image-sensor device includes a semiconductor substrate and a radiation-sensing region in the semiconductor substrate. The image-sensor device also includes a doped isolation region in the semiconductor substrate and a dielectric film extending into the doped isolation region from a surface of the semiconductor substrate. A portion of the doped isolation region is between the dielectric film and the radiation-sensing region.
Public/Granted literature
- US20200303429A1 MECHANISMS FOR FORMING IMAGE-SENSOR DEVICE WITH DEEP-TRENCH ISOLATION STRUCTURE Public/Granted day:2020-09-24
Information query
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