Invention Grant
- Patent Title: Semiconductor device and method of fabricating a semiconductor device
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Application No.: US16697490Application Date: 2019-11-27
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Publication No.: US11342451B2Publication Date: 2022-05-24
- Inventor: John Twynam , Albert Birner , Helmut Brech
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: EP18209796 20181203
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L21/02 ; H01L21/265 ; H01L29/04 ; H01L29/06 ; H01L29/10 ; H01L29/20 ; H01L29/205 ; H01L29/207 ; H01L29/32 ; H01L29/66

Abstract:
A semiconductor device includes a support substrate having a first surface capable of supporting the epitaxial growth of at least one III-V semiconductor and a second surface opposing the first surface, at least one mesa positioned on the first surface, each mesa including an epitaxial III-V semiconductor-based multi-layer structure on the first surface of the support substrate, the III-V semiconductor-based multi-layer structure forming a boundary with the first surface and a parasitic channel suppression region positioned laterally adjacent the boundary.
Public/Granted literature
- US20200176594A1 Semiconductor Device and Method of Fabricating a Semiconductor Device Public/Granted day:2020-06-04
Information query
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