Invention Grant
- Patent Title: Magnetoresistive sensor with reduced stress sensitivity
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Application No.: US16028738Application Date: 2018-07-06
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Publication No.: US11346899B2Publication Date: 2022-05-31
- Inventor: Juergen Zimmer , Klemens Pruegl
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Design IP
- Main IPC: G01R33/09
- IPC: G01R33/09 ; H01L43/10 ; B82Y25/00

Abstract:
A magnetoresistive sensor includes a first non-magnetic layer, a second non-magnetic layer, and a magnetic free bi-layer. The magnetic free bi-layer is disposed between first non-magnetic layer and the second non-magnetic layer, the magnetic free bi-layer including a first magnetic free layer coupled to a second magnetic free layer. The first magnetic free layer is coupled to the first non-magnetic layer, and the second magnetic free layer is coupled to the second non-magnetic layer. The second non-magnetic layer comprises a non-magnetic material having an atomic radius within 10% of an atomic radius of at least one of the first magnetic free layer and the second magnetic free layer.
Public/Granted literature
- US20200011943A1 MAGNETORESISTIVE SENSOR WITH REDUCED STRESS SENSITIVITY Public/Granted day:2020-01-09
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