Invention Grant
- Patent Title: Memory device and method for forming the same
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Application No.: US17035298Application Date: 2020-09-28
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Publication No.: US11348929B2Publication Date: 2022-05-31
- Inventor: Hsin-Wen Su , Chia-En Huang , Shih-Hao Lin , Lien-Jung Hung , Ping-Wei Wang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L27/11521
- IPC: H01L27/11521 ; H01L23/522 ; H01L27/11568 ; G11C7/18 ; H01L29/872 ; G11C8/14
Abstract:
A memory device includes a substrate, a first gate structure and a second gate structure, first, second, third source/drain structures, gate spacers, a first via and a second via, and a semiconductor layer. The first gate structure and the second gate structure are over the substrate. The first, second, third source/drain structures are over the substrate, in which the first and second source/drain structures are on opposite sides of the first gate structure, the second and third source/drain structures are on opposite sides of the second gate structure. The gate spacers are on opposite sidewalls of the first and second gate structures. The first via and the second via are over the first gate structure and the second gate structure, respectively, in which the first via is in contact with the first gate structure. The semiconductor layer is between the second via and the second gate structure.
Public/Granted literature
- US20220102368A1 MEMORY DEVICE AND METHOD FOR FORMING THE SAME Public/Granted day:2022-03-31
Information query
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