Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16799287Application Date: 2020-02-24
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Publication No.: US11348960B2Publication Date: 2022-05-31
- Inventor: Hyoun-Jee Ha , Changhwa Kim , Jeongsoon Kang
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2019-0127283 20191014
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
An image sensor is provided. The image sensor includes a substrate and a conductive line pattern. The substrate includes an isolation pattern that extends from a bottom surface of the substrate into the substrate and defines pixel regions, and a photoelectric conversion region and a transistor for each of the pixel regions. The conductive line pattern is disposed on a top surface of the substrate, and vertically overlaps the isolation pattern in plan view and electrically connects to transistors of two or more of the pixel regions.
Public/Granted literature
- US20210111202A1 SEMICONDUCTOR DEVICE Public/Granted day:2021-04-15
Information query
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