Invention Grant
- Patent Title: Semiconductor devices including support pattern and methods of fabricating the same
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Application No.: US16860136Application Date: 2020-04-28
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Publication No.: US11348996B2Publication Date: 2022-05-31
- Inventor: Jae-Hwan Cho , Sangho Lee , Yoosang Hwang
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Myers Bigel, P.A.
- Priority: KR10-2019-0096895 20190808
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01L27/108 ; H01L27/02

Abstract:
Disclosed are semiconductor devices including support patterns and methods of fabricating the same. The semiconductor devices may include a plurality of vertical structures on a substrate and a support pattern that contacts sidewalls of the plurality of vertical structures. The support pattern may include a plurality of support holes extending through the support pattern. The plurality of support holes may include a first support hole and a second support hole that are spaced apart from each other, and the first support hole may have a shape or size different from a shape or size of the second support hole.
Public/Granted literature
- US20210043722A1 SEMICONDUCTOR DEVICES INCLUDING SUPPORT PATTERN AND METHODS OF FABRICATING THE SAME Public/Granted day:2021-02-11
Information query
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