- 专利标题: ESD protection device
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申请号: US16993399申请日: 2020-08-14
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公开(公告)号: US11355491B2公开(公告)日: 2022-06-07
- 发明人: Shu-Yu Su , Jam-Wem Lee , Wun-Jie Lin
- 申请人: Taiwan Semiconductor Manufacturing Company Limited
- 申请人地址: TW Hsinchu
- 专利权人: Taiwan Semiconductor Manufacturing Company Limited
- 当前专利权人: Taiwan Semiconductor Manufacturing Company Limited
- 当前专利权人地址: TW Hsinchu
- 代理机构: Jones Day
- 主分类号: H01L27/02
- IPC分类号: H01L27/02 ; H02H9/04
摘要:
Systems and methods for protecting a device from an electrostatic discharge (ESD) event are provided. A resistor-capacitor (RC) trigger circuit and a driver circuit are provided. The RC trigger circuit is configured to provide an ESD protection signal to the driver circuit. A discharge circuit includes a first metal oxide semiconductor (MOS) transistor and a second MOS transistor connected in series between a first voltage potential and a second voltage potential. The driver circuit provides one or more signals for turning the first and second MOS transistors on and off.
公开/授权文献
- US20200373294A1 ESD Protection Device 公开/授权日:2020-11-26
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