Invention Grant
- Patent Title: Image sensor with improved light conversion efficiency
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Application No.: US16830966Application Date: 2020-03-26
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Publication No.: US11355544B2Publication Date: 2022-06-07
- Inventor: Shih-Yu Liao , Tsai-Hao Hung , Ying-Hsun Chen
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Sterne, Kessler, Goldstein & Fox P.L.L.C.
- Main IPC: H01L27/14
- IPC: H01L27/14 ; H01L27/146 ; G01J1/44 ; H04N5/369

Abstract:
The present disclosure describes a method for the formation of mirror micro-structures on radiation-sensing regions of image sensor devices. The method includes forming an opening within a front side surface of a substrate; forming a conformal implant layer on bottom and sidewall surfaces of the opening; growing a first epitaxial layer on the bottom and the sidewall surfaces of the opening; depositing a second epitaxial layer on the first epitaxial layer to fill the opening, where the second epitaxial layer forms a radiation-sensing region. The method further includes depositing a stack on exposed surfaces of the second epitaxial layer, where the stack includes alternating pairs of a high-refractive index material layer and a low-refractive index material layer.
Public/Granted literature
- US20210305291A1 IMAGE SENSOR WITH IMPROVED LIGHT CONVERSION EFFICIENCY Public/Granted day:2021-09-30
Information query
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