- 专利标题： Semiconductor device
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申请号： US16135482申请日： 2018-09-19
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公开(公告)号： US11355593B2公开(公告)日： 2022-06-07
- 发明人: Takatomi Izumi , Junya Nishii , Yuhei Ikemoto
- 申请人： TOYODA GOSEI CO., LTD.
- 申请人地址： JP Kiyosu
- 专利权人： TOYODA GOSEI CO., LTD.
- 当前专利权人： TOYODA GOSEI CO., LTD.
- 当前专利权人地址： JP Kiyosu
- 代理机构： McGinn IP Law Group, PLLC
- 优先权： JPJP2017-189645 20170929
- 主分类号： H01L29/20
- IPC分类号： H01L29/20 ; H01L21/28 ; H01L21/02 ; H01L29/417 ; H01L29/49 ; H01L29/423 ; H01L29/78 ; H01L29/51 ; H01L21/3205
摘要：
A semiconductor device comprises: a nitride semiconductor layer; an oxide insulating film formed to contact the nitride semiconductor layer; and a gate electrode formed to contact the oxide insulating film and made of metal nitride in a crystal orientation including at least one of the (200) orientation and the (220) orientation.
公开/授权文献
- US20190103464A1 SEMICONDUCTOR DEVICE 公开/授权日：2019-04-04
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