Invention Grant
- Patent Title: Light-emitting display device and electronic device including an oxide semiconductor layer
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Application No.: US16736008Application Date: 2020-01-07
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Publication No.: US11355669B2Publication Date: 2022-06-07
- Inventor: Ryo Arasawa , Hideaki Shishido
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi
- Agency: Fish & Richardson P.C.
- Priority: JP2009-235180 20091009
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L33/16

Abstract:
An object is to provide a light-emitting display device in which a pixel including a thin film transistor using an oxide semiconductor has a high aperture ratio. The light-emitting display device includes a plurality of pixels each including a thin film transistor and a light-emitting element. The pixel is electrically connected to a first wiring functioning as a scan line. The thin film transistor includes an oxide semiconductor layer over the first wiring with a gate insulating film therebetween. The oxide semiconductor layer is extended beyond the edge of a region where the first wiring is provided. The light-emitting element and the oxide semiconductor layer overlap with each other.
Information query
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