Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17275213Application Date: 2019-09-17
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Publication No.: US11356089B2Publication Date: 2022-06-07
- Inventor: Shunpei Yamazaki , Seiichi Yoneda , Atsushi Miyaguchi , Tatsunori Inoue
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi
- Agency: Robinson Intellectual Property Law Office
- Agent Eric J. Robinson
- Priority: JPJP2018-184775 20180928
- International Application: PCT/IB2019/057788 WO 20190917
- International Announcement: WO2020/065440 WO 20200402
- Main IPC: G11C27/02
- IPC: G11C27/02 ; H03K5/00 ; H03K17/00 ; H03K17/56 ; H02J50/20

Abstract:
Provided is a semiconductor device with a novel structure in which the power consumption can be reduced. The semiconductor device includes a sensor, a sample-and-hold circuit to which a sensor signal of the sensor is input, an analog-digital converter circuit to which an output signal of the sample-and-hold circuit is input, a control circuit, a battery, and an antenna. The sample-and-hold circuit includes a first selection circuit, a plurality of signal retention circuits, and a second selection circuit, and the control circuit performs a control so that a potential corresponding to the sensor signal is retained in the plurality of signal retention circuits successively by the first selection circuit in a first period during which power is supplied from the battery, and performs a control so that the output signal based on the potential retained in the plurality of signal retention circuits is output by the second selection circuit in a second period during which power is supplied from outside through the antenna.
Public/Granted literature
- US20210399726A1 SEMICONDUCTOR DEVICE Public/Granted day:2021-12-23
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