Invention Grant
- Patent Title: Thin film transistor and fabricating method thereof, array substrate and display device
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Application No.: US16473456Application Date: 2018-09-05
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Publication No.: US11367791B2Publication Date: 2022-06-21
- Inventor: Zhaohui Qiang , Jianhua Du , Feng Guan , Chunhao Li
- Applicant: BOE Technology Group Co., Ltd.
- Applicant Address: CN Beijing
- Assignee: BOE Technology Group Co., Ltd.
- Current Assignee: BOE Technology Group Co., Ltd.
- Current Assignee Address: CN Beijing
- Agency: Westman, Champlin & Koehler, P.A.
- Priority: CN201810010296.3 20180105
- International Application: PCT/CN2018/104140 WO 20180905
- International Announcement: WO2019/134380 WO 20190711
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L27/12

Abstract:
The present disclosure provides a thin film transistor, a fabricating method thereof, an array substrate, and a display device. The thin film transistor includes: a substrate; a channel region; a heavily doped first semiconductor pattern located on both sides of the channel region; a second semiconductor pattern disposed on the heavily doped first semiconductor pattern; a gate insulating layer covering the channel region and the second semiconductor pattern; a gate pattern disposed on the gate insulating layer, an orthographic projection of the gate pattern on the substrate being within an orthographic projection of the channel region on the substrate; and a source pattern and a drain pattern in contact with the heavily doped first semiconductor pattern through the first via and the second via, respectively.
Public/Granted literature
- US20200381560A1 THIN FILM TRANSISTOR AND FABRICATING METHOD THEREOF, ARRAY SUBSTRATE AND DISPLAY DEVICE Public/Granted day:2020-12-03
Information query
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